From ‘Ultimate Nano Material Synthesis’ to
‘Quantum Electronics Development’
A society that widely utilizes devices leveraging quantum effects, such as quantum computers and artificial intelligence (AI) semiconductors, is approaching.
The development of quantum materials specialized for such quantum electronics is a very important social issue.
We focus on atomic-layer materials like carbon nanotubes, graphene and transition metal dichalcogenides, which are expected to play a significant role in quantum electronics, and we are working on developing technologies for their high-quality synthesis and functionalization.
Furthermore, we aim to create innovative quantum devices using these materials and implement them in society.
Publications
Louis Smet, Tianyishan Sun, Dingkun Bi, Koga Akagi, Jun Ishihara, Daiki Sekine, Hao Ding, Sota Yamamoto, Hiroto Ogura, Kenji Watanabe, Takashi Taniguchi, Toshiaki Kato and Makoto Kohda*
“Enhanced dexter coupling and increased Rydberg exciton splitting in Janus WSSe: signatures of reduced dielectric screening”
2D Materials, 13, (2026), 035011-1-9
Dingkun Bi, Tianyishan Sun, Weizi Lu, Hiroto Ogura, Yanlin Gao, Mina Maruyama, Susumu Okada, Toshiaki Kato*
“Hidden Role of Electron Accumulation in Driving Room-Temperature Topotactic Substitution for Janus 2D Semiconductors”
ACS Materials Letters, (2026), 1397-1404
Koki Takano,Kohei Yamasue*, Toshiaki Kato, Yasuo Cho
“Nanoscale carrier distribution and trap dynamics in supported and suspended WSe2 layers studied by scanning nonlinear dielectric microscopy”
Applied Physics Letters 128, (2026), 052101-1-6
Experimental device
Plasma CVD-GNR
Plasma CVD-GNR
UV-Visible-NIR Spectrophotometer
UV-Visible-NIR Spectrophotometer
Atomic Layer Transfer Apparatus
Atomic Layer Transfer Apparatus
Solar Cell Characterization Apparatus
Solar Cell Characterization Apparatus